Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means
Reexamination Certificate
2005-06-21
2010-06-22
Hassanzadeh, Parviz (Department: 1792)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
Having glow discharge electrode gas energizing means
Reexamination Certificate
active
07740737
ABSTRACT:
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
REFERENCES:
patent: 4812712 (1989-03-01), Ohnishi et al.
patent: 5110438 (1992-05-01), Ohmi et al.
patent: 6554979 (2003-04-01), Stimson
patent: 6744212 (2004-06-01), Fischer et al.
patent: 2001/0035132 (2001-11-01), Kent et al.
patent: 2003/0094135 (2003-05-01), Komiya et al.
patent: 1193746 (2002-03-01), None
patent: 9-326383 (1997-12-01), None
patent: 2000-173993 (2000-06-01), None
patent: 2000-323460 (2000-11-01), None
patent: 2002-270586 (2002-09-01), None
patent: 2004-087875 (2004-03-01), None
U.S. Appl. No. 11/157,061, filed Jun. 21, 2005, Koshiishi et al.
U.S. Appl. No. 11/156,561, filed Jun. 21, 2005, Koshiishi et al.
Hinata Kunihiko
Iwata Manabu
Kibi Kazuo
Kobayashi Noriyuki
Koshiishi Akira
Chen Keath T
Hassanzadeh Parviz
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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