Plasma processing apparatus and method

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

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Reexamination Certificate

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07740737

ABSTRACT:
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

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U.S. Appl. No. 11/157,061, filed Jun. 21, 2005, Koshiishi et al.
U.S. Appl. No. 11/156,561, filed Jun. 21, 2005, Koshiishi et al.

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