Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

2011-08-02

2011-08-02

Hassanzadeh, Parviz (Department: 1716)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C156S345430, C156S345440, C156S345450, C156S345460, C156S345340, C156S345510, C156S345520, C156S345530, C156S345540, C156S354000, C156S915000, C118S7230ER, C118S7230ER, C118S725000, C118S728000, C118S729000, C315S111210

Reexamination Certificate

active

07988816

ABSTRACT:
A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

REFERENCES:
patent: 6214162 (2001-04-01), Koshimizu
patent: 6878234 (2005-04-01), Ogasawara et al.
patent: 7415940 (2008-08-01), Koshimizu et al.
patent: 2001/0022293 (2001-09-01), Maeda et al.
patent: 2003/0164226 (2003-09-01), Kanno et al.
patent: 2004/0025791 (2004-02-01), Chen et al.
patent: 2004/0261946 (2004-12-01), Endoh et al.
patent: 2005/0051273 (2005-03-01), Maeda et al.
patent: 2005/0103275 (2005-05-01), Sasaki et al.
patent: 2005/0172904 (2005-08-01), Koshimizu et al.
patent: 1461494 (2003-12-01), None
patent: 1 193 746 (2002-04-01), None
patent: 63-253628 (1988-10-01), None
patent: 2-183533 (1990-07-01), None
patent: 4-315797 (1992-11-01), None
patent: 6-124998 (1994-05-01), None
patent: 6-338476 (1994-12-01), None
patent: 07-254588 (1995-10-01), None
patent: 9-326383 (1997-12-01), None
patent: 10-12597 (1998-01-01), None
patent: 2000-36490 (2000-02-01), None
patent: 2000-164583 (2000-06-01), None
patent: 2000-173993 (2000-06-01), None
patent: 2000-323460 (2000-11-01), None
patent: 2001-308080 (2001-11-01), None
patent: 2002-16126 (2002-01-01), None
patent: 2002-270586 (2002-09-01), None
patent: 2003-264170 (2003-09-01), None
patent: 2004-087875 (2004-03-01), None
patent: WO 02093631 (2002-11-01), None
patent: WO 03/068442 (2003-08-01), None
U.S. Appl. No. 11/156,559, filed Jun. 21, 2005, Koshiishi et al.
U.S. Appl. No. 11/156,561, filed Jun. 21, 2005, Koshiishi et al.
Office Action issued Sep. 7, 2010, in Japan Patent Application No. 2005-181133 (with English translation).
Office Action issued Sep. 7, 2010, in Japan Patent Application No. 2005-181132 (with English translation).
Office Action issued Sep. 7, 2010, in Japan Patent Application No. 2005-181131 (with English translation).
Chinese Office Action issued Apr. 13, 2010, in Chinese Patent Application No. 200710004236.2 (with English translation).

Affiliated with

Also associated with

Rating

Plasma processing apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2790153