Plasma processing apparatus and a plasma processing method

Details Plasma processing apparatus and a plasma processing method Plasma processing apparatus and a plasma processing method

2006-05-23

2006-05-23

Zervigon, Rudy (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S067000, C216S068000, C216S069000, C216S071000, C427S446000, C427S457000

Reexamination Certificate

active

07048869

ABSTRACT:
In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

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