Plasma processing apparatus

Coating apparatus – Gas or vapor deposition – Multizone chamber

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S7230ER, C118S733000, C156S345310, C156S345470

Reexamination Certificate

active

07935186

ABSTRACT:
A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

REFERENCES:
patent: 4764076 (1988-08-01), Layman et al.
patent: 5382126 (1995-01-01), Hartig et al.
patent: 5639309 (1997-06-01), Akimoto
patent: 5667592 (1997-09-01), Boitnott et al.
patent: 5811022 (1998-09-01), Savas et al.
patent: 5855681 (1999-01-01), Maydan et al.
patent: 6962644 (2005-11-01), Paterson et al.
patent: 2003/0230385 (2003-12-01), Bach et al.
patent: 2005/0133163 (2005-06-01), Shannon et al.
patent: 2005/0247265 (2005-11-01), Devine et al.
patent: 2007/0030091 (2007-02-01), Xia
patent: 1909184 (2007-02-01), None
patent: 1909185 (2007-02-01), None
patent: 1948550 (2007-04-01), None
Office Action for Chinese Patent Application No. 200710042285.5 dated Nov. 21, 2007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2695908

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.