Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Patent
1997-10-31
2000-03-28
Wong, Don
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
31511121, 31511161, H05B 3700
Patent
active
060436085
ABSTRACT:
This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.
REFERENCES:
patent: 4792810 (1988-12-01), Fukuzawa et al.
patent: 5565736 (1996-10-01), Samukawa et al.
patent: 5580385 (1996-12-01), Paranjpe et al.
patent: 5800621 (1998-09-01), Redeker et al.
"New Ultra-High Frequence Plasma Source For Large-Scale Etching Processes", Seiji Samukawa et al., Jpn. J. Appl. Phys. vol. 34 Part 1 No. 12B (Dec. 1995) pp. 6805-6808.
Nakagawa Yukito
Niimura Yasuo
Samukawa Seiji
Sato Hisaaki
Shinohara Kibatsu
Anelva Corporation
Clinger James
NEC Corporation
Nihon Koshuha Co., Ltd.
Wong Don
LandOfFree
Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1328601