Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1997-07-17
2000-12-05
Pyon, Harold
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118723R, 118715, C23F 102, C23C 1600
Patent
active
061561517
ABSTRACT:
A plasma etching apparatus has a central processing chamber, an upper exhaust chamber thereabove, and a lower exhaust chamber therebelow. The processing chamber, the upper exhaust chamber, and the lower exhaust chamber are airtightly formed by a central casing part, an upper casing part, and a lower casing part which are separably combined. The upper and lower exhaust chambers are respectively connected to upper and lower exhaust pumps. A susceptor having a support surface for supporting a target object, and an upper electrode or shower head opposing it are arranged in the processing chamber. A processing gas spouted through the shower head flows upward and downward toward the upper and lower exhaust chambers via the processing chamber.
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Kazunori Tsujimoto, et al., Journal of Vacuum Science and Technology: Part A, vol. 12, No. 4, pp. 1209-1215, Jul./Aug. 1994, "Short-Gas-Residence-Time-Electron Cyclotron Resonance Plasma Etching".
Arami Jun-ichi
Komino Mitsuaki
Yatsuda Koichi
Pacheco Liza
Pyon Harold
Tokyo Electron Limited
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