Plasma oxidizing method, storage medium, and plasma...

Details Plasma oxidizing method, storage medium, and plasma... Plasma oxidizing method, storage medium, and plasma...

2007-09-27

2011-10-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S771000, C257SE21240, C257SE21301

Reexamination Certificate

active

08043979

ABSTRACT:
A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.

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Office Action issued Dec. 6, 2010, in Korea Patent Application No. 10-2009-7006328.

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