Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-03-22
2011-03-22
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C257SE21079, C257SE21282, C257SE21301, C438S770000, C438S771000
Reexamination Certificate
active
07910495
ABSTRACT:
A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.
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Adachi Hikaru
Kabe Yoshiro
Kitagawa Junichi
Kobayashi Takashi
Shiozawa Toshihiko
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sarkar Asok K
Tokyo Electron Limited
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