Plasma in-situ treatment of chemically amplified resist

Details Plasma in-situ treatment of chemically amplified resist Plasma in-situ treatment of chemically amplified resist

2008-03-25

2008-03-25

Hassanzadeh, Parviz (Department: 1792)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C156S345430

Reexamination Certificate

active

11326934

ABSTRACT:
A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

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