Plasma etching using xenon

Details Plasma etching using xenon Plasma etching using xenon

1993-06-16

1995-01-24

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, H01L 2100

Patent

active

053840097

ABSTRACT:
A process for selectively etching a substrate, having grain boundaries and a resist material thereon, is described. The substrate is placed into an etch zone and a process gas comprising a primary etchant, a secondary etchant, and xenon is introduced into the etch zone. A plasma is generated in the zone to form an etch gas from the process gas, that substantially anisotropically etches the substrate at fast rates, with good selectivity, and reduced profile microloading. Preferably the primary etchant comprises Cl.sub.2, and the secondary etchant comprises BCl.sub.3.

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patent: 5173151 (1992-12-01), Namose
"Mechanisms of Sputtering of Si in a Cl2 Environment by Ions with Energies Down to 75 eV"; J. Appl. Phys. vol. 64, No. 1, Jul. 1988; Oostra et al.; abstract only.

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