Plasma etching process

Details Plasma etching process Plasma etching process

1976-11-22

1977-11-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156659, 204192E, C23F 102

Patent

active

040574601

ABSTRACT:
An improved plasma etching process. There is disclosed apparatus and method (or process) for etching patterns in metal films deposited on a semiconductor wafer. This improved process is particularly useful in the fabrication of certain semiconductor devices, such as MOS and bipolar integrated circuits and Schottky transistors (semiconductor/metal interfaces) which employ contact "fingers". The fingers are constructed from layers of metal, such as aluminum, tungsten, and titanium with aluminum being the outermost layer.

REFERENCES:
patent: 3795557 (1974-03-01), Jacob
patent: 3984300 (1976-10-01), VanOmmeren
IBM Technical Disclosure Bulletin, vol. 13, No. 4, Sept. 1970, Sputter Etching Process by W. E. Mutler, p. 884.

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