Plasma etching of silicon carbide

Details Plasma etching of silicon carbide Plasma etching of silicon carbide

2007-01-23

2007-01-23

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S707000, C438S714000, C438S719000

Reexamination Certificate

active

10430013

ABSTRACT:
A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching gas includes a chlorine containing gas such as Cl2, an oxygen containing gas such as O2, and a carrier gas such as Ar. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrate.

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