Plasma etching of semiconductors

Details Plasma etching of semiconductors Plasma etching of semiconductors

1996-06-07

1997-03-18

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 252 791, H01L 2100

Patent

active

056118880

ABSTRACT:
A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF.sub.3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped oxides of silicon, silicon nitride, silicides and silicon.

REFERENCES:
patent: 5356515 (1994-10-01), Tahara et al.

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