Plasma etching methods

Details Plasma etching methods Plasma etching methods

2005-10-25

2005-10-25

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S724000

Reexamination Certificate

active

06958297

ABSTRACT:
A patterned organic masking layer is formed outwardly of a feature layer to be etched. It has at least one feature pattern having a minimum feature dimension of less than or equal to 0.3 micron. The feature pattern is plasma etched into the feature layer using the masking layer as a mask. The plasma etching comprises at least one etching segment using an etching gas comprising one gas compound comprising carbon, hydrogen and at least one halogen under conditions effective to produce at least that portion of the one feature pattern in the feature layer to have a sidewall taper, if any, of less than or equal to 5° and an organic masking layer top outer surface roughness proximate the feature pattern at a conclusion of the etching segment which is characterizable by an average value less than 100 Angstroms. Other implementations are also contemplated.

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