Plasma etching method and plasma etching system for carrying out

Details Plasma etching method and plasma etching system for carrying out Plasma etching method and plasma etching system for carrying out

1998-01-26

2000-12-12

Mayekar, Kishor

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

156345, H01L 2100

Patent

active

061593885

ABSTRACT:
Plasma etching method and apparatus for removing relatively thick portions from wafers by etching while measuring an actual etch quantity to thereby manufacture the wafers excellent in flatness quality on a mass-production basis. A conduit 20 of a plasma generator 2 is positioned above a relatively thick portion 111 of the wafer 110 to etch away a wafer material from the relatively thick portion 111 by ejecting a fluorine gas G. A laser beam L0 is emitted from a laser displacement meter 30 of a measuring apparatus 3 to detect an interference state between a reflected light beam L1 from the relatively thick portion 111 and a reflected light beam L2 form a reflecting plate 32 and count periodical changes of the interference state. When the count value m coincides with an integral value derived by dividing a desired etch quantity by a half wavelength of the laser beam L0, etching of the relatively thick portion 111 by the fluorine gas G is terminated.

REFERENCES:
patent: 4454001 (1984-06-01), Sternheim et al.
patent: 4838694 (1989-06-01), Betz et al.
patent: 5254830 (1993-10-01), Zarowin et al.
patent: 5376224 (1994-12-01), Zarowin
patent: 5450205 (1995-09-01), Sawin et al.
patent: 5795493 (1998-08-01), Bukhman et al.

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