Plasma-etching method and apparatus therefor

Details Plasma-etching method and apparatus therefor Plasma-etching method and apparatus therefor

1994-03-28

1995-11-21

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 20429837, 20429838, H05H 100

Patent

active

054683416

ABSTRACT:
A plasma-etching method and an apparatus therefor are provided, in which microwaves are introduced and a high frequency electric fields generated thereby is pulse-modulated by a signal of a frequency higher than about 10 kHz for producing the plasmas for etching a wafer. The pulse modulation of the high frequency electric fields may be performed with a pulse interval time shorter than about 10 .mu.s. The radical production ratio in ECR plasmas, ion temperature and charge accumulation can be controlled thereby enabling the etching performance at a high precision.

REFERENCES:
patent: 4808258 (1989-02-01), Otsubo et al.
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 5013401 (1991-05-01), Samukawa et al.
patent: 5034086 (1991-07-01), Sato
patent: 5160397 (1992-11-01), Doki et al.
patent: 5231057 (1993-07-01), Doki et al.
patent: 5273609 (1993-12-01), Moslehi

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