Plasma etching method

Details Plasma etching method Plasma etching method

1997-11-06

1999-11-09

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 71, 438710, 438729, 438714, B44C 122, C03C 1500

Patent

active

059807695

ABSTRACT:
A plasma etching method and apparatus are provided in which a distance between an ejection opening (20a) in a plasma generator (2) for ejecting an active species gas and a surface of an object to be etched can be changed to thereby shorten the time required for a surface flattening operation and reduce the cost of equipment as well. To this end, the ejection opening (20a) of a predetermined diameter is disposed in confrontation with a desired convex of the object to be etched in the form of a wafer (110). The active species gas in the form of an F gas (G) is ejected from the ejection opening (20a) to the convex to thereby flatten it through etching. A distance between the ejection opening and the convex is changed by means of a Z drive mechanism (4) to provide an etching area corresponding to an area of the convex, thus performing effective flattening of the wafer (110).

REFERENCES:
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patent: 5352324 (1994-10-01), Gotoh et al.
patent: 5376224 (1994-12-01), Zarowin
patent: 5670018 (1997-09-01), Eckstein
patent: 5879573 (1999-03-01), Robinett
patent: 5895582 (1999-04-01), Wilson et al.

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