Plasma etching method

Details Plasma etching method Plasma etching method

2006-02-16

2008-10-28

Goudreau, George A. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000, C438S722000, C438S734000, C438S740000

Reexamination Certificate

active

07442651

ABSTRACT:
An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.

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Search Report/Office Action issued on Feb. 27, 2007 for Korean Application No. 10-2006-0015666.
English language translation of Search Report/Office Action for Korean Application No. 10-2006-0015666, issued Feb. 27, 2007.

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