Plasma etching apparatus and method

Details Plasma etching apparatus and method Plasma etching apparatus and method

1990-03-09

1991-03-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156646, 156662, 156345, 20419233, 20429832, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

050026313

ABSTRACT:
Reactive ion plasma etching apparatus and method are based upon the discovery of enhanced uniformity of etching at low workpiece temperatures. With cooling to sufficiently low temperatures, spontaneous etching is inhibited and etching uniformity is controlled not by gas flow and pressure but rather by ion flux. As a result, one can eliminate uniformity enhancing apparatus which heretofore obstructed optical access to the workpiece, provide window means permitting optical access to a major portion of the workpiece and employ sophisticated optical monitoring techniques during the etching process.

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