Plasma etch process

Details Plasma etch process Plasma etch process

1992-01-09

1994-12-27

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 156345, 156653, H01L 2100

Patent

active

053762231

ABSTRACT:
Method employing low pressure plasma having high electron density for rapid oxide etching employing hydrogen and argon and specific electron clyclotron resonance (ECR) operating parameters in an ECR having a non-oxygen contributing environment in the reaction chamber.

REFERENCES:
patent: 5111111 (1992-05-01), Cecchi et al.
Shibata et al., "Si Surface Cleaning and Expitaxial Growth of GaAs on Si by Electron Cyclotron Resonance Plasma-Excited Molecular--Beam Epitaxy at Low Temperatures", J. Electrochem. Soc., v. 136, No. 11, Nov. 1989, pp. 3459-3462.
Suemune et al., "Incidence Angle Effect of a Hydrogen Plasma Beam for the Cleaning of Semiconductor Surfaces," Appl. Phys. Lett., v. 55, No. 8, Aug. 21, 1989, pp. 760-762.

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