Semiconductor device manufacturing: process – Chemical etching – Altering etchability of substrate region by compositional or...
Patent
1997-10-27
1999-02-16
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Altering etchability of substrate region by compositional or...
438723, 438725, 134 12, H01L 21302
Patent
active
058720618
ABSTRACT:
A method for forming a patterned fluorine containing plasma etched layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a fluorine containing plasma etchable layer. There is then formed upon the fluorine containing plasma etchable layer a patterned photoresist layer. There is then etched through a fluorine containing plasma etching method while employing the patterned photoresist layer as a photoresist etch mask layer the fluorine containing plasma etchable layer to form a patterned fluorine containing plasma etched layer. The patterned fluorine containing plasma etched layer has a fluoropolymer residue layer formed thereupon. The fluorine containing plasma etch method employs a first etchant gas composition comprising a nitrogen trifluoride etchant gas. Finally, there is stripped through an oxygen containing plasma stripping method the patterned photoresist layer and the fluoropolymer residue layer from the patterned fluorine containing plasma etched layer. The oxygen containing plasma stripping method employs a second etchant gas composition comprising a fluorine containing etchant gas and an oxygen containing etchant gas.
REFERENCES:
"Oxidative Removal of Photoresist by Oxygen/Freon 116 Discharge Products"; Hannon et al.-J. Elect. Soc.; vol. 131, No. 5 pp. 1164-1169; 1984.
"Reducing Etch Rate of Photoresist During Reactive Ion etching-using Polymer Enhancing Agent to Form Vertical Etched Profiles"; p. D-322; 100; Feb. 10, 1991; Anonymous.
"Impact of Reactive Ion Etching Induced Carbon Contamination on Oxidation of Silicon"; J. Elect. Soc. vol. 143, No. 7, pp. 2378-2387; Tsuchiaki et al; Jul. 1996.
Kuo So Wein
Lee Shing-Long
Tsai Chia Shiung
Ackerman Stephen B.
Goudreau George
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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