Plasma enhanced CVD apparatus and process, and dry etching appar

Details Plasma enhanced CVD apparatus and process, and dry etching appar Plasma enhanced CVD apparatus and process, and dry etching appar

1996-10-03

1999-04-06

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 71, 156345, 427569, 118723I, 118723E, H05H 100

Patent

active

058913491

ABSTRACT:
A plasma enhanced CVD apparatus includes a processing chamber, a pumping system for evacuating the processing chamber, a gas inlet system for introducing a source gas, and a plasma generating electrode provided in the processing chamber for depositing a film on a substrate in the processing chamber by plasma generated by electrical power supplied to the plasma generating electrode; the plasma generating electrode has two terminals, one of the terminals is connected to a radio frequency power source and other of the terminals is grounded through an electrode potential controlling system; and the processing chamber is grounded through an inner wall potential controlling system. The present invention is further directed to a plasma enhanced CVD process, a dry etching apparatus, and a dry etch process.

REFERENCES:
patent: 5531834 (1996-07-01), Ishizuka et al.
patent: 5721021 (1998-02-01), Tobe et al.
Observation of Ion Scattering from Metal Surfaces Bombarded with Low-Energy Hydrocarbon Ions; Jpn. J. Appl. Phys. vol. 34 (1995) pp. L516-L519; Part 2, No. 4B; 15 Apr. 1995.
Electrostatic Coupling of Antenna and the Shielding Effect in Inductive RF Plasma; Jpn. J. Appl. Phys. vol. 33 (1994) pp. 2189-2193; Part 1, No. 4B, Apr. 1994.
8th Symposium on Plasma Science for Materials; Japanese Society for the Promotion of Science, Committee 153 (Plasma Material Science) p. 87; Jun. 1995.
RF Plasma Production at Ultralow Pressures with Surface Magnetic Confinement; Jap. J. of Applied Phys. vol. 29, No. 6, Jun. 1990, pp. L1015-L1018.

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