Plasma enhanced chemical vapor deposition methods of forming hem

Details Plasma enhanced chemical vapor deposition methods of forming hem Plasma enhanced chemical vapor deposition methods of forming hem

1998-05-22

2000-06-20

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

42725518, 4272557, 427 81, 438253, 438396, H05H 124, C23C 1624

Patent

active

060775734

ABSTRACT:
A method of forming a microelectronic device includes the step of forming an impurity doped amorphous silicon layer on a microelectronic substrate using plasma-enhanced chemical vapor deposition. The impurity doped amorphous silicon layer is patterned so that portions of the microelectronic substrate are exposed adjacent the patterned amorphous silicon layer. A hemispherical grained silicon layer is then formed on the patterned amorphous silicon layer. Moreover, the step of forming the impurity doped amorphous silicon layer can be performed at a temperature of 400.degree. C. or less.

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Watanabe, H., et al., Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous Doped Amorphour-Si Using The Seeding Method. Extended Abstract of the 1992 International Conference on Solid State Devices and Materials, Tsukuba, pp. 422-424 (Aug. 26-28, 1992).
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