Plasma enhanced chemical vapor deposition method of forming...

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

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C427S255170

Reexamination Certificate

active

07033642

ABSTRACT:
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

REFERENCES:
patent: 4957777 (1990-09-01), Ilderem et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5252518 (1993-10-01), Sandhu et al.
patent: 5278100 (1994-01-01), Doan et al.
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5954887 (1999-09-01), Hatano
patent: 5976976 (1999-11-01), Doan et al.
patent: 6019839 (2000-02-01), Achutharaman et al.
patent: 6086442 (2000-07-01), Sandhu et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6245674 (2001-06-01), Sandhu
patent: 6255216 (2001-07-01), Doan et al.
patent: 6404058 (2002-06-01), Taguwa
patent: 6444556 (2002-09-01), Sharan et al.
patent: 6472756 (2002-10-01), Doan et al.
patent: 6554910 (2003-04-01), Sandhu et al.
patent: 6586285 (2003-07-01), Basceri et al.
patent: 6734051 (2004-05-01), Basceri et al.
U.S. Appl. No. 09/944,903, filed Aug. 30, 2001, Derraa et al. (as filed).
U.S. Appl. No. 09/945,065, filed Aug. 30, 2001, Derraa et al. (as filed).

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