Plasma enhanced atomic layer deposition system and method

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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C427S575000, C427S576000, C427S577000, C427S578000

Reexamination Certificate

active

07435454

ABSTRACT:
A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Electromagnetic power is coupled to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate, electromagnetic power is coupled to a gas injection electrode to generate a plasma that ionizes contaminants such that the ionized contaminants are attracted to a plurality of orifices in the gas injection electrode. The process chamber is vacuum pumped through the plurality of orifices to expel the ionized contaminants from the process chamber.

REFERENCES:
patent: 6723642 (2004-04-01), Lim et al.
patent: 6936535 (2005-08-01), Kim et al.
patent: 2002/0144657 (2002-10-01), Chiang et al.
patent: 2003/0019917 (2003-01-01), Furuno et al.
patent: 2003/0172872 (2003-09-01), Thakur et al.
patent: 2004/0092132 (2004-05-01), Doan et al.
patent: 2004/0224504 (2004-11-01), Gadgil

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