Plasma enhanced atomic layer deposition system and method

Details Plasma enhanced atomic layer deposition system and method Plasma enhanced atomic layer deposition system and method

2005-03-21

2008-03-11

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S778000, C438S785000, C427S457000, C427S584000

Reexamination Certificate

active

07341959

ABSTRACT:
A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, wherein the process chamber includes a substrate zone proximate the substrate and a peripheral zone proximate to a peripheral edge of the substrate. Also included is introducing a first process material within the process chamber, introducing a second process material within the process chamber and coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and the second process materials at a surface of the substrate. Electromagnetic power is coupled to a process electrode to generate a substrate zone plasma in the substrate zone that ionizes contaminants substantially in a region of the substrate, and electromagnetic power to a peripheral electrode to generate a peripheral zone plasma in the peripheral zone having a characteristic different from the substrate zone plasma such that ionized contaminants are transported from the substrate zone to the peripheral zone in the process chamber.

REFERENCES:
patent: 6723642 (2004-04-01), Lim et al.
patent: 6936535 (2005-08-01), Kim et al.
patent: 2003/0172872 (2003-09-01), Thakur et al.

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