Plasma enhanced atomic layer deposition system and method

Details Plasma enhanced atomic layer deposition system and method Plasma enhanced atomic layer deposition system and method

2008-01-01

2008-01-01

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C257SE21161

Reexamination Certificate

active

11083899

ABSTRACT:
A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process. A first process material is introduced within the process chamber, and a second process material is introduced within the process chamber. Electromagnetic power of more than 600 W is coupled to the process chamber during introduction of the second process material in order to generate a plasma that accelerates a reduction reaction between the first and second process materials at a surface of the substrate. The film is formed on the substrate by alternatingly introducing the first process material and the second process material.

REFERENCES:
patent: 2004/0151844 (2004-08-01), Zhang et al.
patent: 2006/0177579 (2006-08-01), Shin et al.

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