Plasma enhanced atomic layer deposition (PEALD) equipment...

Details Plasma enhanced atomic layer deposition (PEALD) equipment... Plasma enhanced atomic layer deposition (PEALD) equipment...

2006-11-21

2006-11-21

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C438S695000, C118S729000

Reexamination Certificate

active

07138336

ABSTRACT:
A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet tube and a process gas outlet tube are installed symmetrically and concentrically with respect to a substrate, thereby allowing the process gas to flow uniformly, evenly and smoothly over the substrate, thereby forming a thin film uniformly over the substrate. A uniquely designed showerhead assembly provides not only reduces the volume of the reactor space, but also allows the process gases to flow uniformly, evenly and smoothly throughout the reation space area and reduces the volume of the reaction space, and the smaller volume makes it easier and fast to change the process gases for sequential and repeated process operation.

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English Language Abstract of Korean Patent Application No. 10-1999-0011877.

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