Plasma doping method and plasma doping apparatus

Details Plasma doping method and plasma doping apparatus Plasma doping method and plasma doping apparatus

2011-01-04

2011-01-04

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C257SE21334

Reexamination Certificate

active

07863168

ABSTRACT:
In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.

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