Plasma doping method

Details Plasma doping method Plasma doping method

2006-12-29

2008-08-05

Baumeister, Bradley W. (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S010000, C438S017000, C257SE21147, C427S569000

Reexamination Certificate

active

07407874

ABSTRACT:
A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved.It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 5572038 (1996-11-01), Sheng et al.
patent: 5711812 (1998-01-01), Chapek et al.
patent: 5851906 (1998-12-01), Mizuno et al.
patent: 5969398 (1999-10-01), Murakami
patent: 6383901 (2002-05-01), Chen
patent: 6531367 (2003-03-01), Chen
patent: 7135423 (2006-11-01), Downey
patent: 2002/0187614 (2002-12-01), Downey
patent: 2003/0153101 (2003-08-01), Takase et al.
patent: 2004/0045507 (2004-03-01), Okumura et al.
patent: 2004/0119025 (2004-06-01), Klepper et al.
patent: 2004/0132260 (2004-07-01), Lenoble
patent: 2004/0147070 (2004-07-01), Lei et al.
patent: 2005/0170669 (2005-08-01), Okumura et al.
patent: 2005/0277273 (2005-12-01), Sasaki et al.
patent: 2005/0287776 (2005-12-01), Sasaki et al.
patent: 2006/0006348 (2006-01-01), Yamazaki et al.
patent: 2006/0097193 (2006-05-01), Horsky et al.
patent: 2006/0264051 (2006-11-01), Thibaut
patent: 2006/0280876 (2006-12-01), Yen et al.
patent: 2006/0289799 (2006-12-01), Fang et al.
patent: 2007/0020958 (2007-01-01), Okumura et al.
patent: 2007/0023700 (2007-02-01), Koezuka et al.
patent: 4-368763 (1992-12-01), None
patent: 5-36620 (1993-02-01), None
patent: 9-115852 (1997-05-01), None
patent: 2000-114198 (2000-04-01), None
patent: 3340318 (2002-08-01), None
patent: 2004-179592 (2004-06-01), None
patent: 2005-109453 (2005-04-01), None
patent: WO 2004051720 (2004-06-01), None
patent: WO 2004/109785 (2004-12-01), None
patent: WO 2005/020306 (2005-03-01), None
“International Technology Roadmap for Semiconductors 2001 Edition,” Front End Processes, pp. 223-225, 2001 Semiconductor Industry Association.
“International Technology Roadmap for Semiconductors 2003 Edition,” Front End Processes, Draft 6.1, Nov. 8, 2003, pp. 1-8.
Y. Sasaki et al., B2H6Plasma Doping with “In-situ He Pre-amorphization,” UJT confidential.
Jones, E., et al., “Plasma Doping Dosimetry”, IEEE Transactions on Plasma Science, Feb. 1997, pp. 42-52, vol. 25 No. 1.
Mizuno, B., et al., “New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering”, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, Aug. 1995, pp. 1041-1042, The Japan Society of Applied Physics, Osaka Japan.
Stetson, WJ, “Gas Dispersion Technique”, IBM Technical Disclosure Bulletin, Feb. 1979, p. 3579.
Carabe, J., et al., “Microstructure of thin films prepared by plasma-enhanced chemical vapour deposition of helium-diluted silane”, Applied Surface Science, Apr. 1999, pp. 11-15, vol. 143 No. 1-4, Elsevier Science B.V.
Yamashita, F., et al., “Direct Joule Heating of Nd-Fe-B Based Melt-Spun Powder and Zinc Binder”, 1999, IEEE.
Chu, P.K., et al., “Part one of two, Plasma Doping: Progress and potential”, Solid State Technology, Sep. 1999, pp. 55-60, www.solid-state.com.
Chu, P.K., et al., “Part two of two, Plasma Doping: Progress and potential”, Solid State Technology, Oct. 1999, pp. 77-82, www.solid-state.com.
Hori, A., et al., “CMOS Device Technology toward 50 nm Region—Performance and Drain Architecture—”, IEDM, 1999, pp. 641-644, IEEE.
Kwok, Dixon T.K., et al., “Energy distribution and depth profile in BF3plasma doping”, Surface and Coatings Technology, 2001, pp. 146-150, vol. 136, Elsevier Science B.V.
Yamashita, F., et al., “Nd-Fe-B Thin Arc-shaped Bonded Magnets for Small DC Motors Prepared by Powder Compacting Press with Ion-implanted Punches”, J. Mgn. Soc. Japan, 2001, pp. 683-686, vol. 25, No. 4-2.
Yamashita, F., et al., “Preparation of a Solid Rotor Composed of a Highly Dense Ring-Shaped RE Bonded Magnet and an Iron-Dust Core”, Trans. Magn. Soc. Japan., 2002, pp. 111-114, vol. 2 No. 3.
Mizuni, B., “Ultra Shallow Junction for sub-50NM CMOS—The role of Plasma Doping- ”, UJTLab, pp. 10-13, Ultimate Junction Technologies Inc.
Sasaki, Y., et al., “B2H6Plasma Doping with In-situ He Pre-amorphization”, Symposium on VLSI Technology Digest of Technical Papers, 2004, pp. 180-181, IEEE.
Sasaki, Y., et al., “Plasma Doped Shallow Junction Formation”, Matsushita Technical Journal, Dec. 2004, pp. 404-409, vol. 50 No. 6.
Tsutsui, K., et al., “Doping Effects from Neutral B2H6Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping”, The Japan Society of Applied Physics, 2005, pp. 3903-0907, vol. 44 No. 6A.
Mizuno, B., et al., “De-Excitation Pathways of highly-Excited Self-Trapped Exciton and Electron Plus Self-Trapped Hole”, Journal of the Physical Society of Japan, Jun. 1983, pp. 1901-1903, vol. 52 No. 6.
Mizuno, B., “Excitation-Induced Atomic Motion of Self-Trapped Excitons in RbCl: Reorientation and Defect Formation”, Journal of the Physical Society of Japan, Sep. 1986, pp. 3258-3271, vol. 55 No. 9.
Mizuno, B., et al., “Effect of Hydrogen on Oxygen Removal from Silicon-Overlayer on Insulator formed by O+Implantation”, pp. 637-640, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
Fujita, T., et al., “Electron Paramagnetic Resonance Studies of Defects in Oxygen-Implanted Silicon”, Jaanese Journal of Applied Physics, Jul. 1987, pp. L1116-L1118, vol. 26 No. 7.
Mizuno, B., et al., “Effective removal of oxygen from Si layer on burned oxide by implantation of hydrogen”, J. Appl. Phys., Sep. 1987, pp. 2566-2568, vol. 62 No. 6.
Mizuno, B., et al., “New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma”, Appl. Phys. Lett., Nov. 1988, pp. 2059-2061, vol. 53 No. 21, American Institute of Physics.
Shimizu, N., et al., “Reduction of Thickness Secondary Defects in MeV ion Impalted Silicon by Intrinsic Gettering”, Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989, pp. 177-180.
Hori, A., et al., “A 0.05 μm-CMOS with Shallow Source/Drain Junctions Fabricated by 5KeV Ion Implantation and Rapid Thermal Annealing”, 1994, pp. 485-488, IEDM.
Hori, A., et al., “Fabrication and Characteristics of a Room Temeprature 0.05 μm-CMOS—Possibility and Design Concept of Sub-0.1 μm MOS Devices-”, Technical Report of IEICE, 1995, pp. 41-46, The Institute of Electronics, Information and Communication Engineers.
Mizuno, B., et al. “Plasma doping for silicon”, Surface and Coatings Technology, 1996, pp. 51-55, vol. 85, Elsevier Science S.A.
Mizuno, B., et al., “Plasma Doping of Boron for Fabricating the Surface Channel Sub-quarter micron PMOSFET”, Symposium on VLSI Technology Digest of Technical Digest of Technical Papers, 1996, IEEE.
Takase, M., et al., “An evaluation method for a high concentration profile produced in very low energy doping processes”, Nuclear Instruments and Methods in Physics Research, 1997, pp. 288-290, vol. 121, Elsevier Science B.V.
Takase, M., et al., “Suppressing I

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