Plasma development process for photoresist

Details Plasma development process for photoresist Plasma development process for photoresist

1978-09-05

1980-12-23

Welsh, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

156643, 156644, 430312, 430313, 430314, 430300, 430306, 430325, 430326, 430329, 430330, 430435, G03C 524

Patent

active

042411653

ABSTRACT:
After exposure to radiation photoresist may be developed by a dry process using a gas plasma, preferably an oxygen plasma. The process can be used for chemical milling, photolithography, printed circuit board and photomask manufacture and it is particularly advantageous in the manufacture of semiconductors. The plasma development process can be followed by plasma etch and strip processes without requiring removal of the work piece from the plasma reactor.

REFERENCES:
patent: 3705055 (1972-12-01), Christensen et al.
patent: 3920483 (1975-11-01), Johnson, Jr. et al.
patent: 3997367 (1976-12-01), Yau
patent: 4056395 (1977-11-01), Sato et al.
Hollohan et al., Techniques and Applications of Plasma Chemistry, Wiley & Sons, (1975), pp. 350-355.

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