Method for minimizing diffusion of conductivity enhancing impuri

Details Method for minimizing diffusion of conductivity enhancing impuri Method for minimizing diffusion of conductivity enhancing impuri

1991-08-30

1993-08-17

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 52, 437150, 437904, H01L 21265, H01L 2170

Patent

active

052368564

ABSTRACT:
A polysilicon layer is provided with a p-type impurity, and masked with an oxide mask to define a p-type region of the polysilicon layer. A second impurity is then provided into first unmasked regions of the polysilicon layer. A second oxide mask is deposited and anisotropically etched to form spacers adjacent to the first oxide mask. The spacers define two diffusion barrier regions of the polysilicon layer adjacent to the p-type region. An n-type impurity is then provided into second unmasked regions of the polysilicon layer to form two n-type regions adjacent the diffusion barrier regions. The diffusion barrier regions prevent cross diffusion of the p-type and the n-type impurities within the polysilicon layer, while also being of sufficient dimensions to permit normal p
operations.

REFERENCES:
patent: 4045249 (1977-08-01), Hotta
patent: 4851359 (1989-07-01), Boudou et al.
patent: 5034797 (1991-07-01), Yamanaka et al.
patent: 5104818 (1992-04-01), Silver

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