Plasma deposited selective wetting material

Details Plasma deposited selective wetting material Plasma deposited selective wetting material

2006-04-11

2006-04-11

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S005000

Reexamination Certificate

active

07026102

ABSTRACT:
A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

REFERENCES:
patent: 4532150 (1985-07-01), Endo et al.
patent: 4921321 (1990-05-01), Weidman
patent: 5500250 (1996-03-01), Ogawa et al.

Affiliated with

Also associated with

Rating

Plasma deposited selective wetting material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma deposited selective wetting material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma deposited selective wetting material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3541158