Plasma deposited fluorinated amorphous carbon films

Details Plasma deposited fluorinated amorphous carbon films Plasma deposited fluorinated amorphous carbon films

1999-05-03

2000-11-21

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438763, 438780, H01L 214763

Patent

active

061502588

ABSTRACT:
An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.

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