Plasma CVD process for forming a fluorine-doped SiO.sub.2 dielec

Details Plasma CVD process for forming a fluorine-doped SiO.sub.2 dielec Plasma CVD process for forming a fluorine-doped SiO.sub.2 dielec

1997-08-18

2000-06-20

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427578, 427575, 427577, 427571, 427225393, H05H 124

Patent

active

060775742

ABSTRACT:
In a process for forming a plasma CVD fluorine-doped SiO.sub.2 dielectric film, a feed gas to be supplied to a plasma CVD apparatus is composed to include not only SiH.sub.4 gas, O.sub.2 gas, CF.sub.4 gas and Ar gas but also CO.sub.2 gas, and the amount of carbon and the amount of fluorine included in the feed gas are controlled independently of each other, to form a plasma CVD silicon-based SiO.sub.2 dielectric film doped with fluorine in the concentration range of 4.0.times.10.sup.21 atoms/cc to 1.0.times.10.sup.22 atoms/cc, and carbon in the concentration range of 3.0.times.10.sup.19 atoms/cc to 1.0.times.10.sup.21 atoms/cc. Thus, a plasma CVD silicon-based SiO.sub.2 dielectric film having a low dielectric constant and a sufficient "resistance to moisture" is obtained.

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Katsumata et al; "Imrpovement in Hygroscopicity of PE-CVD F-doped SiO2"; 1995; pp. 269-274; Dry Process Symposium.
Hayasaka et al; "High-Quality and Low Dielectric Constant SiO2 CVD Using High Density PLasma"; 1993; pp. 163-168; Dry Process Symposium.
Fukada et al; Preparation of SiOF Films with Low Dielectric Constant By ECR Plasma CVD; pp. 43-49; Feb. 1995; DUMIC Conference.
Fukada et al; "Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition"; 1993; pp. 158-160; Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Hayasaka et al; "Fluorine Doped SiO2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection"; 1995; pp. 157-159; Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.

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