Plasma CVD method and plasma CVD apparatus

Details Plasma CVD method and plasma CVD apparatus Plasma CVD method and plasma CVD apparatus

1998-06-05

2000-04-18

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427577, 4272555, 427453, 427131, 4273982, 118718, 118723E, 118729, H05H 124

Patent

active

060512857

ABSTRACT:
A plasma CVD is provided for film formation in which a support member is sufficiently cooled so as to suppress thermal deformation and abnormal discharge, thus enabling to preferably carry out the film formation.
After a metal thin film is formed on a tape-shaped non-magnetic support member, the non-magnetic support member is made to travel continuously along a cooling can wile a thin film is formed on the metal thin film by way of the plasma CVD method, wherein the cooling can includes a metal can 12 having an outer circumferential surface which is entirely covered by an insulating layer 15 formed by a ceramic having a thickness of 0.3 to 1.0 mm.

REFERENCES:
patent: 4511594 (1985-04-01), Yanai et al.
patent: 5302424 (1994-04-01), Murai et al.
patent: 5338577 (1994-08-01), Burdette, II
patent: 5585139 (1996-12-01), Steininger et al.
patent: 5691008 (1997-11-01), Thoma et al.
patent: 5900283 (1999-05-01), Vakil et al.

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