Plasma CVD apparatus for forming a thin film of uniform thicknes

Details Plasma CVD apparatus for forming a thin film of uniform thicknes Plasma CVD apparatus for forming a thin film of uniform thicknes

1995-11-27

1997-03-11

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118728, 118500, 118503, 20429815, C23C 1600

Patent

active

056096917

ABSTRACT:
The window of a holding electrode is a rectangular opening and an insulating plate is securely fitted in this window. The insulating plate has a rectangular flange shape having a rectangular opening. A glass substrate is securely fitted in the opening of the insulating plate. While the insulating plate may be a low-cost glass plate or quartz plate, the glass plate made of the same material as the glass substrate is used. A predetermined raw gas is supplied into a reaction chamber to set the pressure therein to a predetermined level, and high-frequency power is applied between the glass substrate and the electrode. Because the peripheral portion of the glass substrate is surrounded by the insulating plate, it is possible to avoid the influence of the disturbance of the electric field which would otherwise occur at the interface between the substrate surface and the surface of the holding electrode due to the surface of the glass substrate being charged up when growing a film. This allows a film with a uniform thickness to be grown on the glass substrate.

REFERENCES:
patent: 3436255 (1969-04-01), Harris
patent: 4367114 (1983-01-01), Steinberg
patent: 4512841 (1985-04-01), Cunningham
patent: 4599069 (1986-07-01), Murakami
patent: 4793975 (1988-12-01), Drage
patent: 5262029 (1993-11-01), Erskine
patent: 5376180 (1994-12-01), Mahler
patent: 5449411 (1995-09-01), Fukuda
patent: 5490881 (1996-02-01), Kwasnick

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