Plasma CVD apparatus

Details Plasma CVD apparatus Plasma CVD apparatus

2009-04-02

2011-11-08

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S782000, C438S788000, C438S792000, C438S905000

Reexamination Certificate

active

08053338

ABSTRACT:
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber104with a power source113, a vacuum exhausting means118, and a reaction gas introduction pipe114, plasma115is generated in a space surrounded by an electrode111, a substrate holder112, and an insulator120.

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