Plasma control method and plasma control apparatus

Details Plasma control method and plasma control apparatus Plasma control method and plasma control apparatus

2008-03-04

2008-03-04

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S680000, C257SE21017, C257SE21219, C257SE21218

Reexamination Certificate

active

07338887

ABSTRACT:
A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the variations of the film deposition conditions. The vacuum chamber includes a high-frequency-wave electrode connected to a high-frequency electric power supply and an earth electrode connected to ground potential. High frequency-electric power is fed to the high-frequency-wave electrode and peak-to peak voltages are measured at multiple measuring points on one of the two electrodes. The distribution of the plasma is controlled by adjusting the chamber pressure to minimize the differences between the measured peak-to-peak voltages.

REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 4496448 (1985-01-01), Tai et al.
patent: 4585516 (1986-04-01), Corn et al.
patent: 4602981 (1986-07-01), Chen et al.
patent: 4622094 (1986-11-01), Otsubo
patent: 5415718 (1995-05-01), Ohmi et al.
patent: 2001/0021422 (2001-09-01), Yamakoshi
patent: 2002/0159216 (2002-10-01), Ennis
patent: 2002/0186018 (2002-12-01), Sill et al.
patent: 2000-164520 (2000-06-01), None
patent: 2001-257098 (2001-09-01), None
patent: 2002-313743 (2002-10-01), None
patent: 2004-253417 (2004-09-01), None

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