Plasma composition for selective high-k etch

Details Plasma composition for selective high-k etch Plasma composition for selective high-k etch

2006-10-24

2009-10-06

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S773000, C438S792000, C257SE21143, C257SE21212, C257SE21218

Reexamination Certificate

active

07598184

ABSTRACT:
A method for the selective removal of a high-k layer such as HfO2over silicon or silicon dioxide is provided. More specifically, a method for etching high-k selectively over silicon and silicon dioxide and a plasma composition for performing the selective etch process is provided. Using a BCl3plasma with well defined concentrations of nitrogen makes it possible to etch high-k with at a reasonable etch rate while silicon and silicon dioxide have an etch rate of almost zero. The BCl3comprising plasmas have preferred additions of 10 up to 13% nitrogen. Adding a well defined concentration of nitrogen to the BCl3/N2plasma gives the unexpected deposition of a Boron-Nitrogen (BxNy) comprising film onto the silicon and silicon dioxide which is not deposited onto the high-k material. Due to the deposition of the Boron-Nitrogen (BxNy) comprising film, the etch rate of silicon and silicon dioxide is dropped down to zero. The Boron-Nitrogen (BxNy) comprising film can be removed during the etching process using the right substrate bias (leading to ion bombardment) or after the etching process by a simple water rinse since the Boron-Nitrogen (BxNy) comprising film is water soluble.

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Office Action mailed Aug. 24, 2007 in related application U.S. Appl. No. 11/544,351.
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U.S. Appl. No. 11/544,351, filed Oct. 5, 2006, available as Image File Wrapper.
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