Plasma cleaning of a CVD or etch reactor using helium for plasma

Details Plasma cleaning of a CVD or etch reactor using helium for plasma Plasma cleaning of a CVD or etch reactor using helium for plasma

1993-10-29

1995-10-03

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

1566461, 1566431, 134 1, H05H 100

Patent

active

054549035

ABSTRACT:
A method of cleaning the interior of a vacuum chamber of an RF plasma reactor having RF plasma excitation apparatus and gas injection ports includes introducing etchant gases of the type tending to destabilize a plasma, such as NF.sub.3 for example, into the vacuum chamber, applying RF power to the RF plasma excitation apparatus so as to ignite a plasma in the chamber and introducing an electron-donor gas into the chamber.

REFERENCES:
patent: 4960488 (1990-10-01), Law et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5017264 (1991-05-01), Yamazaki et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5207836 (1993-05-01), Chang

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