Plasma cleaning of a CVD or etch reactor using a low or mixed fr

Details Plasma cleaning of a CVD or etch reactor using a low or mixed fr Plasma cleaning of a CVD or etch reactor using a low or mixed fr

1997-01-21

1999-03-16

El-Arini, Zeinab

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 1, 134 221, 216 67, B08B 700, B08B 900, B08B 500

Patent

active

058824243

ABSTRACT:
An apparatus and method for cleaning the interior of a vacuum chamber of a plasma reactor which includes introducing an etchant gas through inlet ports into the vacuum chamber and applying RF power to a RF plasma excitation apparatus so as to ignite and sustain a plasma within the chamber. The frequency of the RF signal is less than 1 MHz. Alternately, an apparatus and method for cleaning the aforementioned vacuum chamber where at least two different RF power signals can be employed. In one embodiment of this alternate method the step of applying RF power involves providing a first and second RF signal, where each signal exhibits a different frequency. The first RF signal is of a higher frequency and provided to ignite a plasma within the chamber, and thereafter terminated, whereas the second RF signal is of a lower frequency, less than 1 MHz, and provided to sustain the plasma. In another embodiment, the step of applying RF power again comprises providing separate RF signals, where each signal exhibits a different frequency. However, in this embodiment, the signals are used to generate a mixed frequency RF excitation field from the RF plasma excitation apparatus to ignite and sustain a plasma within the chamber. Here again, the first RF signal is of a higher frequency and the second RF signal is of a lower frequency, i.e. less than 1 MHz.

REFERENCES:
patent: 4464223 (1984-08-01), Gorin
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4786352 (1988-11-01), Benzing
patent: 5421957 (1995-06-01), Carlson et al.
patent: 5454903 (1995-10-01), Redeker et al.

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