Plasma cleaning gas and plasma cleaning method

Details Plasma cleaning gas and plasma cleaning method Plasma cleaning gas and plasma cleaning method

2008-01-29

2008-01-29

Barr, Michael (Department: 1746)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S022100, C134S022180, C134S034000, C216S063000, C216S067000, C216S069000, C438S905000

Reexamination Certificate

active

07322368

ABSTRACT:
A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

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