Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2011-03-08
2011-03-08
Barr, Michael (Department: 1711)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C434S410000, 43, C250S492210, C438S781000, C438S758000, C438S759000, C438S760000, C438S623000, C438S638000, C428S426000, C427S255280, C427S058000, C427S096100
Reexamination Certificate
active
07901743
ABSTRACT:
A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectric constant of SiO2. The plurality of substrates are heated, and a treating compound comprising a CxHycontaining compound, wherein x and y represent integers greater than or equal to unity is introduced to the process system. A plasma is formed and at least one surface of the dielectric film on said plurality of substrates is exposed to the plasma.
REFERENCES:
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5473165 (1995-12-01), Stinnett et al.
patent: 5968587 (1999-10-01), Frankel
patent: 6296711 (2001-10-01), Loan et al.
patent: 7345000 (2008-03-01), Kevwitch et al.
patent: 2003/0170605 (2003-09-01), Long et al.
patent: 2004/0175501 (2004-09-01), Lukas et al.
patent: 2005/0215072 (2005-09-01), Kevwitch et al.
patent: 2004-343017 (2004-12-01), None
Lee Eric M.
Toma Dorel I.
Barr Michael
Bowman Andrew
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
LandOfFree
Plasma-assisted vapor phase treatment of low dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma-assisted vapor phase treatment of low dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma-assisted vapor phase treatment of low dielectric... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2676319