Plasma-assisted processing magneton with magnetic field adjustme

Details Plasma-assisted processing magneton with magnetic field adjustme Plasma-assisted processing magneton with magnetic field adjustme

1990-08-02

1992-01-07

Laroche, Eugene R.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31511121, 31323131, H05H 146

Patent

active

050794817

ABSTRACT:
A magnetron plasma processing module (20) with magnetic field adjustment for magnetron-plasma-enhanced processing of a semiconductor wafer includes a magnetron housing, a plurality of magnets (44), and magnetically conductive pins (26) for varying the magnetic field distribution and strength at the semiconductor wafer (52). Top plate (34) adjustably engages magnetically conductive pins (26). A magnetically nonconductive cylinder (36) supports top plate (34) and receives pins (26) from top plate (34). Magnet assembly (40) connects to cylinder (36) and contains magnets (44). Magnet assembly (40) also has bore (82) to receive pins (26). Magnetically conductive ring (38) separates cylinder (36) from magnet assembly (40) and engages pins (26) to isolate the magnetic field from cylinder (36). Magnets (44) and extension iron bars associate with magnet assembly (40) to establish the magnetic field having adjustable uniformity. Iron bars (42) associate with magnets (44) to aid in producing a uniform magnetic field at semiconductor (52). The magnetron module (20) can be rotated to achieve uniform magnetron plasma processing.

REFERENCES:
patent: 3445722 (1969-05-01), Scott et al.
patent: 4838978 (1989-06-01), Sekine et al.
patent: 4909314 (1990-03-01), Lamont, Jr.

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