Plasma ashing process

Details Plasma ashing process Plasma ashing process

2005-10-04

2005-10-04

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S711000, C438S714000, C438S725000

Reexamination Certificate

active

06951823

ABSTRACT:
A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.

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