Plasma ashing method

Details Plasma ashing method Plasma ashing method

1990-08-27

1994-03-15

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, 437228, H01L 21306

Patent

active

052942929

ABSTRACT:
A plasma ashing method to prevent a generation of a resist-residue buildup is disclosed that includes a step for installation of a substrate on which a photoresist material is formed in a chamber, a step for drawing a vacuum in the chamber and keeping the chamber at a predetermined pressure, a step for filling oxygen gas in the camber and keeping the chamber at approximately 1 Torr, and a step for applying a high-frequency electric power of 0.10 [W/cm.sup.2 ] or less to the oxygen gas. A more effective range of the high-frequency electric power per area of the internal wall of the chamber is from 0.008 to 0.10 [W/cm.sup.2 ]. The most effective value of the high-frequency electric power is 0.055 [W/cm.sup.2 ].

REFERENCES:
patent: 4474621 (1984-10-01), Saccocio et al.

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