Plasma apparatus

Details Plasma apparatus Plasma apparatus

2002-10-28

2003-11-04

Nguyen, Hoang (Department: 2821)

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

C118S7230ER, C156S345370, C156S345430

Reexamination Certificate

active

06642662

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a plasma apparatus, and more particularly to a plasma apparatus which improves an RF feed through installed to apply RF power to a plasma electrode.
2. Description of the Background Art
In general, the conventional plasma apparatus has a problem that an RF feed through to which RF is applied has a short life span. A Kanthal wire is generally used as the RF feed through. However, the RF feed through composed of the Kanthal wire is oxidized or phase-transformed when exposed in high temperature for a long time since the Kanthal wire is a wire type.
FIG. 1
is a schematic view to explain a plasma apparatus in accordance with the conventional art. Referring to
FIG. 1
, a plasma electrode
20
of stainless material is installed at an upper portion of a quartz dome
10
above a plasma chamber to cover the quartz dome
10
. At this time, the plasma electrode
20
has a dome shape like the quartz dome
10
and is apart from the quartz dome
10
with a predetermined interval. A bell jar
30
is installed to cover the plasma electrode
20
, and an outer upper portion of the bell jar generally has a flat shape. An RF feed through
50
of a wire type penetrates a lateral side of the bell jar
30
and is connected to the plasma electrode
20
. Then, RF power passes through an RF connector
40
and the RF feed through
50
sequentially and is supplied to the plasma electrode
20
.
According to the conventional plasma apparatus, when RF is applied to the RF feed through
50
, a lot of heat is generated since the RF feed through
50
is a wire type. Accordingly, the RF feed through
50
is easily oxidized or phase-transformed, thereby changing an impedance of the RF feed through
50
. Also, the bell jar
30
is generally provided with a bell jar heater (not shown) to heat the plasma chamber. At this time, the impedance of the RF feed through
50
is more changed by the bell jar heater. If the impedance of the RF feed through
50
is changed, the RF power applied to the plasma electrode
20
is not constant, thereby degrading a reliability of a process.
SUMMARY OF THE INVENTION
Therefore, an object of the present invention is to provide a plasma apparatus which has a constant impedance even if an RF feed through is exposed in high temperature for a long time.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, there is provided a plasma apparatus comprising a plasma chamber formed as a quartz dome at an upper portion thereof and having a gas inlet and a gas outlet; a plasma electrode apart from the quartz dome with a constant interval and having a dome shape like the quartz dome to cover the quartz dome; a bell jar installed to cover the plasma electrode; and an RF feed through of a stick type installed to vertically penetrate an upper portion of the bell jar so as to be connected to a peak of a center of the plasma electrode.


REFERENCES:
patent: 4842683 (1989-06-01), Cheng et al.
patent: 5628829 (1997-05-01), Foster et al.
patent: 5716870 (1998-02-01), Foster et al.
patent: 5866213 (1999-02-01), Foster et al.
patent: 6524430 (2003-02-01), Shim et al.

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