Plasma and electron beam etching device and method

Details Plasma and electron beam etching device and method Plasma and electron beam etching device and method

2006-08-14

2009-08-04

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S660000, C438S689000, C438S693000, C438S905000, C438S909000, C257SE21025, C257SE21252, C257SE21311, C257SE21407

Reexamination Certificate

active

07569484

ABSTRACT:
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

REFERENCES:
patent: 4832781 (1989-05-01), Mears
patent: 5155053 (1992-10-01), Atkinson
patent: 5508368 (1996-04-01), Knapp et al.
patent: 5622567 (1997-04-01), Kojima et al.
patent: 5976328 (1999-11-01), Azuma et al.
patent: 6214183 (2001-04-01), Maishev et al.
patent: 6309972 (2001-10-01), Pio
patent: 6811615 (2004-11-01), Sun
patent: 2006/0154477 (2006-07-01), Geng et al.
patent: 2006/0183055 (2006-08-01), O'Neill et al.
patent: 2006/0201911 (2006-09-01), Edelberg et al.
patent: 2007/0228002 (2007-10-01), Geng et al.

Affiliated with

Also associated with

Rating

Plasma and electron beam etching device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma and electron beam etching device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma and electron beam etching device and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4089417