Planarizing method employing hydrogenated silicon nitride...

Details Planarizing method employing hydrogenated silicon nitride... Planarizing method employing hydrogenated silicon nitride...

2006-10-31

2006-10-31

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Reexamination Certificate

active

07129151

ABSTRACT:
A planarizing method for forming a patterned planarized aperture fill layer within an aperture employs a planarizing stop layer formed of a reductant based material, such as but not limited to a hydrogenated silicon nitride material. The reductant based material provides the planarizing stop layer with enhanced planarizing stop properties. The method is particularly useful within the context of CMP planarizing methods.

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